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| Semiconductor RFM6N45, RFP6N45, RFP6N50 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425. September 1998 Features * 6A, 450V and 500V [ /Title (RFM6 N45, RFP6N4 5, RFP6N5 0) /Subject 6A, 50V nd 00V, .250 hm, Nhannel ower OSETs) /Author ) /Keyords Harris emionducor, Nhannel ower OSETs, O04AA, O20AB) /Creator ) /DOCIN * rDS(ON) = 1.250 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedence * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER RFM6N45 RFP6N45 RFP6N50 PACKAGE TO-204AA TO-204AA TO-220AB BRAND RFM6N45 RFP6N45 RFP6N50 S G NOTE: When ordering, include the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 1494.2 5--1 RFM6N45, RFP6N45, RFP6N50 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM6N45 450 450 6 15 20 100 0.8 -55 to 150 300 260 RFP6N45 450 450 6 15 20 75 0.6 -55 to 150 300 260 RFP6N50 500 500 6 15 20 75 0.6 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kW) (Note 1). . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 450 500 VGS(TH) IDSS VGS = VDS, ID = 250A (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC Gate to Source Leakage Current Drain to Source On Resistance(Note 2 ) Drain to Source On-Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC RFM6N45 RFP6N45, RFP6N50 VGS = 0V, VDS = 25V f = 1MHz, (Figure 9) VGS = 20V, VDS = 0V ID = 6A, VGS = 10V, (Figures 6, 7) ID = 6A, VGS = 10V ID = 3A, VDD = 250V, RG = 50, VGS = 10V, RL = 81 (Figures 10, 11, 12) 2 15 40 190 60 4 1 25 100 1.250 7.50 45 80 300 100 1500 250 200 1.25 1.67 V V V A A nA V ns ns ns ns pF pF pF oC/W oC/W Electrical Specifications PARAMETER MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFM6N45, RFP6N45 RFP6N50 Gate Threshold Voltage Zero-Gate Voltage Drain Current Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulsed test: Pulse width 300s duty cycle 2% 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = 3A ISD = 4A, dISD/dt = 100A/s MIN TYP 800 MAX 1.4 UNITS V ns 5-2 RFM6N45, RFP6N45, RFP6N50 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 7 6 5 4 3 2 1 0 25 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) 0 50 100 150 50 75 100 125 150 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 DC OPERATION ID, DRAIN CURRENT (A) TC = 25oC 12 PULSE DURATION = 80s VGS = 7 V to 10V DUTY CYCLE 2% 10 TC = 25oC 8 6 4 2 0 VGS = 6V VGS = 5V 75W 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 100W ID, DRAIN CURRENT (A) VDSS (Max) 450V RFM6N45, RFP6N45 VDSS (MAX) 500V RFP6N50 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 VGS = 4V 0 2 6 8 10 12 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 14 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS ID(ON), DRAIN TO SOURCE CURRENT (A) 14 VDS = 20V 80s PULSE TEST DUTY CYCLE 2% 10 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2 4 VGS, GATE TO SOURCE VOLTAGE (V) 6 25oC -40oC VGS = 10V PULSE DURATION = 80s DUTY CYCLE 2% rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 125oC 6 25oC 125oC 2 0 -40oC 0 2 4 6 10 8 ID, DRAIN CURRENT (A) 12 14 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5-3 RFM6N45, RFP6N45, RFP6N50 Typical Performance Curves 3.5 NORMALIZED DRAIN TO SOURCE ID = 6A VGS = 10V 2.5 NORMALIZED GATE THRESHOLD VOLTAGE (Continued) 1.5 VGS = VDS ID = 250A ON RESISTANCE 1.0 1.5 0.5 0.5 0 -50 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 0 50 100 TC, JUNCTION TEMPERATURE (oC) 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 500 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VGS, GATE TO SOURCE VOLTAGE (V) 1400 C, CAPACITANCE (pF) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS CISS 375 VDD = BVDSS GATE SOURCE VOLTAGE RL = 83 IG(REF) = 1.1mA VGS = 10V 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 8 VDD = BVDSS 6 1000 250 600 4 125 COSS 200 CRSS 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 2 DRAIN SOURCE VOLTAGE 0 0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT) NOTE: Refer to Harris Applications Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4 |
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